Artigo De: scopus

Contactless doping characterization of Ga2O3 using acceptor Cd probes

Scientific Reports

Barbosa M.B.; Correia J.G.; Araújo J.P. — 2022 — Springer

Informações chave

Autores:

Barbosa M.B.; Correia J.G. (João Guilherme Martins Correia); Lorenz K. (Katharina Lorenz); Lopes A.M.L.; Oliveira G.N.P.; Fenta A.S.; Schell J.; Teixeira R.; Nogales E.; Méndez B.; Stroppa A.; Araújo J.P.

Publicado em

1 de dezembro de 2022

Resumo

Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor β-Ga2O3Ga2O3 could strongly influence and contribute to the development of the next generation of power electronics. In this work, we combine easily accessible ion implantation, diffusion and nuclear transmutation methods to properly incorporate the Cd dopant into the β-Ga2O3Ga2O3 lattice, being subsequently characterized at the atomic scale with the Perturbed Angular Correlation (PAC) technique and Density Functional Theory (DFT) simulations. The acceptor character of Cd in β-Ga2O3Ga2O3 is demonstrated, with Cd sitting in the octahedral Ga site having a negative charge state, showing no evidence of polaron deformations nor extra point defects nearby. The possibility to determine the charge state of Cd will allow assessing the doping type, in particular proving p-type character, without the need for ohmic contacts. Furthermore, a possible approach for contactless charge mobility studies is demonstrated, revealing thermally activated free electrons for temperatures above ∼ 648 K with an activation energy of 0.54(1) and local electron transport dominated by a tunneling process between defect levels and the Cd probes at lower temperatures.

Detalhes da publicação

Autores da comunidade :

Editora

Springer

Ligação para a versão da editora

https://www.nature.com/srep

Título do contentor da publicação

Scientific Reports

Primeira página ou número de artigo

14584

Volume

12

Fascículo

1

DOI

10.1038/s41598-022-18121-y

WoS (Web of Science)

846571700012

Domínio Científico (FOS)

physical-sciences - Física

Palavras-chave

  • Characterization and analytical techniques
  • Electronic properties and materials
  • Semiconductors

Idioma da publicação (código ISO)

eng - Inglês

Identificador alternativo (URI)

https://doi.org/10.1038/s41598-022-18121-y

Acesso à publicação:

Acesso Aberto

Licença Creative Commons

CC-BY - Atribuição