Katharina Lorenz received her PhD in Physics from the University of Bonn, Germany in 2002. She is currently researcher at Instituto Superior Técnico, University of Lisbon and INESC Microsystems & Nanotechnology, Lisbon, Portugal. Her research interests include the doping and defect engineering of wide band gap semiconductors for optical and sensor applications as well as the study of radiation effects in semiconductors for radiation detectors and radiation resistant electronics.
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Katharina Lorenz received her PhD in Physics from the University of Bonn, Germany in 2002. She is coordinating researcher at the Department of Nuclear Sciences and Engineering of Instituto Superior Técnico (IST), University of Lisbon and she is leading the research group on Wide Bandgap Semiconductors at INESC Microsystems & Nanotechnology, Lisbon, Portugal. Currently she is the president of the Department of Nuclear Sciences and Engineering of IST and director of the Laboratory of Accelerators and Radiation Technologies of IST. Her research interests include the doping and defect engineering of wide band gap semiconductors for optical and sensor applications as well as the study of radiation effects in semiconductors for radiation detectors and radiation resistant electronics.