Aging Characterization and Simulation Analysis of IGBT Power Devices

28 de julho de 2026

This paper focuses on device failures easily triggered by bonding wire aging and gate oxide aging during long-term operation of IGBT, and conducts research on these two typical aging modes. Starting from failure mechanisms, this paper analyzes the thermo-mechanical coupling fatigue process of bonding wire aging, as well as dielectric degradation induced by electric field-temperature coupling effect during gate oxide aging. On this basis, an IGBT aging characterization method based on characteristic electrical parameter extraction is proposed. The collector-emitter saturation voltage is adopted to reflect bonding wire aging condition, and the voltage rise time during turn-off period is used to characterize gate oxide aging state. An electro-thermal coupling simulation model of IGBT is established on the Saber platform to explore the evolution rules of relevant characteristic parameters under varying aging degrees. Simulation results verify that the selected parameters can effectively reflect the variation tendency of corresponding aging status, which preliminarily demonstrates the feasibility of the proposed characterization method. The research findings can provide theoretical references for health monitoring, remaining useful life prediction and predictive maintenance of IGBT devices, and support the stable operation of new energy equipment and power systems. Future research can integrate multi-field coupling aging mechanism, intelligent diagnosis algorithms and online monitoring systems to further improve the long-term service reliability of power Device.

Autores da comunidade :

• 

  W

  Weizun Gao

  ist1115686

Orientadores desta instituição:

• 

  A

  António José Castelo Branco Rodrigues

  ist12288

electrical-engineering-electronic-engineering-information-engineering - Engenharia Eletrotécnica, Eletrónica e Informática

por - Português

Instituto Superior Técnico