Article

High depth resolution Rutherford backscattering analysis of Si-Si0.78Ge0.22/(0 0 1)Si superlattices

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Barradas, NP; Jeynes, C; Parker, EHC — 1998

Key information

Authors:

Barradas, NP (Nuno Pessoa Barradas); Jeynes, C; Mironov, OA; Phillips, PJ; Parker, EHC

Published in

April 1998

Abstract

Si 30 nm/Si0.78Ge0.22 5 nm superlattices were grown on (0 0 1) Si by solid source molecular beam epitaxy (MBE) at temperatures between 550 degrees C and 810 degrees C. Their structural properties were studied by high depth resolution RES analysis. The sample grown at the highest temperature has the sharpest interfaces, correlating well with the observation by Raman spectroscopy of zone-folded acoustic modes. The Si and SiGe layer thickness and the Ge concentration were determined, and agree with sub-keV secondary ion mass spectroscopy (SIMS) results. Channelling shows a minimum yield better than 3%, denoting a good crystalline quality of the layers. (C) 1998 Elsevier Science B.V.

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Title of the publication container

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

First page or article number

239

Last page

243

Volume

139

Issue

1-4

Fields of Science and Technology (FOS)

physical-sciences - Physical sciences

Publication language (ISO code)

eng - English

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