High depth resolution Rutherford backscattering analysis of Si-Si0.78Ge0.22/(0 0 1)Si superlattices

Abril 1998

Si 30 nm/Si0.78Ge0.22 5 nm superlattices were grown on (0 0 1) Si by solid source molecular beam epitaxy (MBE) at temperatures between 550 degrees C and 810 degrees C. Their structural properties were studied by high depth resolution RES analysis. The sample grown at the highest temperature has the sharpest interfaces, correlating well with the observation by Raman spectroscopy of zone-folded acoustic modes. The Si and SiGe layer thickness and the Ge concentration were determined, and agree with sub-keV secondary ion mass spectroscopy (SIMS) results. Channelling shows a minimum yield better than 3%, denoting a good crystalline quality of the layers. (C) 1998 Elsevier Science B.V.

Autores da comunidade :

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  N

  Nuno Pessoa Barradas

  ist25378

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

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physical-sciences - Física

eng - Inglês